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2013
Journal Article
Titel
Investigation of CH4, NH3, H2 and He plasma treatment on porous low-k films and its effects on resisting moisture absorption and ions penetration
Abstract
This paper investigates the influence of CH4, NH3, H2 and He plasma on properties of porous low-k film and its effects on resisting moisture absorption during CMP and ions penetration from sputtering. It is found that the H2, He, NH3 plasma can cause aggressive carbon depletion in the porous low-k films and change the low-k surface from hydrophobic to hydrophilic, which will induce moisture uptake into the low-k material during the CMP process, and result in increase of the k value and leakage current density. The CH4 plasma can make low-k material more resist against moisture uptake and keep the k value stable and a good electrical property of the low-k films.