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Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi

 
: Noll, S.; Scholten, D.; Grieb, M.; Bauer, A.J.; Frey, L.

:

Lebedev, A.A.:
Silicon Carbide and Related Materials 2012 : Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2 - 6, 2012, St. Petersburg, Russian Federation
Dürnten: Trans Tech Publications, 2013 (Materials Science Forum 740/742)
ISBN: 978-3-03-785624-6
pp.521-524
European Conference on Silicon Carbide and Related Materials (ECSCRM) <9, 2012, St. Petersburg>
English
Conference Paper
Fraunhofer IISB ()

Abstract
In this work we investigate the effect of the aluminum p-well implant annealing process on the electrical properties of lateral 4H-SiC MOSFET transistors. The interface trap concentration was measured by quasi-static capacitive voltage (QSCV) and negative bias stress measurements on MOSFETs. We found that higher annealing temperatures significantly reduce the trap density in the lower bandgap, and as a consequence the threshold voltage drift of the transistor after negative stress is reduced.

: http://publica.fraunhofer.de/documents/N-264732.html