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Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation

: Mortet, V.; Bedel-Pereira, E.; Bobo, J.F.; Cristiano, F.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.


Lebedev, A.A.:
Silicon Carbide and Related Materials 2012 : Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2 - 6, 2012, St. Petersburg, Russian Federation
Dürnten: Trans Tech Publications, 2013 (Materials Science Forum 740/742)
ISBN: 978-3-03-785624-6
European Conference on Silicon Carbide and Related Materials (ECSCRM) <9, 2012, St. Petersburg>
Conference Paper
Fraunhofer IISB ()

Effect of a shallow nitrogen implantation in the channel region of n-channel 4H-SiC Hall bar MOSFETs on their electrical properties has been characterized by Hall effect. A significant improvement of Hall mobility in normally-off devices is observed with increasing nitrogen implantation dose up to 1013 cm-2 with a peak Hall mobility of 42.4 cm2.V-1.s-1. Coulomb scattering as dominant scattering mechanism up to room temperature is demonstrated using temperature dependent MOS-Hall effect characterization.