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Accurate and efficient physical simulation of program disturb in scaled NAND flash memories

: Kuligk, A.; Nguyen, C.D.; Löhr, D.-A.; Beyer, V.; Meinerzhagen, B.


Institute of Electrical and Electronics Engineers -IEEE-:
ULIS 2013, 14th International Conference on Ultimate Integration on Silicon : Incorporating the 'Technology Briefing Day'; 19-21 March 2013, Coventry
New York, NY: IEEE, 2013
ISBN: 978-1-4673-4800-3 (Print)
ISBN: 978-1-4673-4801-0 (Online)
International Conference on Ultimate Integration on Silicon (ULIS) <14, 2013, Coventry>
Conference Paper
Fraunhofer IPMS ()

Program disturb may ultimately limit the scalability of modern NAND flash memory technologies and is typically most serious for the memory cells neighboring the string select transistors. The feasibility, accuracy, and predictive capability of a new advanced physical simulation model for the program disturb in NAND flash memories is demonstrated by means of a comprehensive experimental verification based on a 48 nm TANOS technology. For the first time it is demonstrated that the dependence of program disturb on the distance between the memory cells and the select transistors can be accurately modeled by a physical model without fitting any model parameter.