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Measuring techniques for deformation and stress analysis in micro-dimensions

 
: Vogel, D.; Auerswald, E.; Auersperg, J.; Rzepka, S.; Michel, B.

:

Institute of Electrical and Electronics Engineers -IEEE-:
14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013 : 14-17 April 2013, Wroclaw, Poland
New York, NY: IEEE, 2013
ISBN: 978-1-4673-6138-5
ISBN: 978-1-4673-6139-2
7 pp.
International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) <14, 2013, Wroclaw>
English
Conference Paper
Fraunhofer ENAS ()

Abstract
The paper reviews some of the currently used strain / stress measurement tools developed for rather local application - deformation and stress measurement by Digital Image Correlation (DIC) techniques, microRaman, and electron diffraction for stress measurement. The selected methods possess spatial measurement resolutions of 1 µm or better, which makes them ideal to meet typical demands for strain and stress analyses on objects with high gradients, like e.g. advanced MEMS, semiconductor devices, and components of 3D IC integration. DIC methods applied to stress measurement, which have been seized past years by different labs, are described in more detail. Examples of stress determination on TSVs by DIC and microRaman approaches illustrate the utilization of these methods to analyze stresses in electronics components of current interest. Finally, a brief comparison between the DIC, microRaman and electron diffraction techniques (EBSD) is given.

: http://publica.fraunhofer.de/documents/N-264500.html