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2013
Journal Article
Titel
Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding
Abstract
GaInP/GaAs//Si solar cells with three active p-n junctions were fabricated by surface activated direct wafer bonding between GaAs and Si. The direct wafer bond is performed at room temperature and leads to a conductive and transparent interface. This allows the fabrication of high-efficiency monolithic tandem solar cells with active junctions in both Si and the III-V materials. This technology overcomes earlier challenges of III-V and Si integration caused by the large difference in lattice constant and thermal expansion. Transmission electron microscopy revealed a 5-nm thin amorphous interface layer formed by the argon fast atom beam treatment before bonding. No further defects or voids are detected in the photoactive layers. First triple-junction solar cell devices on Si reached an efficiency of 23.6% under concentrated illumination.
Author(s)
Tags
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Materialien - Solarzellen und Technologie
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III-V und Konzentrator-Photovoltaik
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Farbstoff
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Organische und Neuartige Solarzellen
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Alternative Photovoltaik-Technologien
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III-V Epitaxie und Solarzellen
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Tandemsolarzellen auf kristallinem Silicium
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Solarzellen und Bauelemente
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heterojunctions
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semiconductor materials
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solar cell
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bonding