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Effects of high-temperature treatment on the hydrogen distribution in silicon oxynitride/silicon nitride stacks for crystalline silicon surface passivation

: Schwab, C.; Hofmann, M.; Heller, R.; Seiffe, J.; Rentsch, J.; Preu, R.


Physica status solidi. A 210 (2013), No.11, pp.2399-2403
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Oberflächen - Konditionierung; Passivierung; Lichteinfang; Herstellung und Analyse von hocheffizienten Solarzellen; Pilotherstellung von industrienahen Solarzellen; Industrielle und neuartige Solarzellenstrukturen; Silicon; Nitride; Hydrogen; Oxynitride; Passivation

This work investigates a double layer stack system that can be used for surface passivation of crystalline silicon. The stack consists of amorphous silicon-rich silicon oxynitride and amorphous silicon nitride on top. Both layers are fabricated by means of plasma-enhanced chemical vapour deposition. We investigate the stack in terms of changes in the hydrogen content and distribution within the different stack layers due to a high temperature treatment. For that purpose the stack is studied by Fourier-transformed infrared spectroscopy and nuclear reaction analysis before and after fast firing at 850°C. Our results determine the bottom silicon oxynitride layer as very hydrogen-rich. Furthermore, we identify the silicon nitride capping layer as diffusion barrier to atomic hydrogen but still allowing an effusion of molecular hydrogen. We present a qualitative model that explains our findings and distinguishes between atomic and molecular hydrogen.