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Improving electric behavior and simplifying production of Si-based diodes by using thermal laser separation

: Koitzsch, M.; Lewke, D.; Schellenberger, M.; Pfitzner, L.; Ryssel, H.; Kolb, R.; Zühlke, H.-U.


Institute of Electrical and Electronics Engineers -IEEE-; Semiconductor Equipment and Materials International -SEMI-, San Jose/Calif.:
24th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2013 : 14-16 May 2013, Saratoga Springs, NY
New York, NY: IEEE, 2013
ISBN: 978-1-4673-5006-8 (Print)
ISBN: 978-1-4673-5007-5
Advanced Semiconductor Manufacturing Conference (ASMC) <24, 2013, Saratoga Springs/NY>
Conference Paper
Fraunhofer IISB ()

Leakage current of silicon (Si) based diodes could be reduced by a factor of 1,000 while using Thermal Laser Separation (TLS) compared to state-of-the-art mechanical blade dicing. Laser based heating and subsequent water spray cooling is used to induce a mechanical stress field inside the Si-wafer guiding a crack along a line to be cut without melting or removing material. Results of physical and electrical measurements prove that TLS does not damage diode edges which allows for cutting through the p-n-junction hence simplifying the production process and reducing costs.