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Passivation of black silicon boron emitters with atomic layer deposited aluminum oxide

: Repo, P.; Benick, J.; Gastrow, G. von; Vähänissi, V.; Heinz, F.D.; Schön, J.; Schubert, M.C.; Savin, H.


Physica status solidi. Rapid research letters 7 (2013), No.11, pp.950-954
ISSN: 1862-6254
ISSN: 1862-6270
Journal Article
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Oberflächen - Konditionierung; Passivierung; Lichteinfang; Industrielle und neuartige Solarzellenstrukturen; Charakterisierung; Qualitätssicherung und Messtechnikentwicklung - Material; Zellen und Module; Silicon; passivation; Emitter; Oxide

The nanostructured surface - also called black silicon (b-Si) - is a promising texture for solar cells because of its extremely low reflectance combined with low surface recombination obtained with atomic layer deposited (ALD) thin films. However, the challenges in keeping the excellent optical properties and passivation in further processing have not been addressed before. Here we study especially the applicability of the ALD passivation on highly boron doped emitters that is present in crystalline silicon solar cells. The results show that the nanostructured boron emitters can be passivated efficiently using ALD Al2O3 reaching emitter saturation current densities as low as 51 fA/cm2. Furthermore, reflectance values less than 0.5% after processing show that the different process steps are not detrimental for the low reflectance of b-Si.