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Fracture mechanics life-time modeling of low temperature Si fusion bonded interfaces used for 3D MEMS device integration

 
: Naumann, F.; Bernasch, M.; Siegert, J.; Carniello, S.; Petzold, M.

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
IEEE 63rd Electronic Components and Technology Conference, ECTC 2013. Proceedings : 28-31 May 2013, Las Vegas, NV, USA
New York, NY: IEEE, 2013
ISBN: 978-1-4799-0233-0 (Print)
ISBN: 978-1-4799-0232-3
pp.390-396
Electronic Components and Technology Conference (ECTC) <63, 2013, Las Vegas/Nev.>
English
Conference Paper
Fraunhofer IWM ( IMWS) ()
3D integrated MEMS; thermo-mechanical FEA; scanning acoustic microscopy; IR imaging

Abstract
In addition to through silicon vias (TSV), wafer bonding became one of the key process steps within 3D integration technologies that allows stacking image or MEMS sensor chips on top of ASIC. Depending on the package, the wafer bonded interface can be loaded by built-in residual stresses and the risk of defect generation and propagation - caused by stress corrosion of the highly loaded siloxane - can lead to bond delamination and failure of the TSV interconnects. In this paper, the basic processes affecting the long-term strength properties in Si bonded interfaces are discussed and summarized on a specific demonstrator. Using finite-element simulation, it is shown that if low temperature Si fusion bonded components are mechanically stressed for extended times a subcritical crack growth of pre-existing micro-defects can occur. Fracture mechanics approaches were applied to predict the time-dependent strength reduction of initial defects, analyzed by Scanning-Acoustic-Microscopy. In addition, the paper presents a general framework of how the life-time properties of loaded low temperature fusion bonded interfaces can be simulated and how the needed material parameters can be determined. Using this method it is possible to consider the life-time properties already during the design stage, thus, reducing the risk of reliability issues during field use.

: http://publica.fraunhofer.de/documents/N-264321.html