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Wafer level packaging for ultra thin (6 µm) high brightness LEDs using embedding technology

: Kleff, J.; Töpper, M.; Dietrich, L.; Oppermann, H.; Herrmann, S.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
IEEE 63rd Electronic Components and Technology Conference, ECTC 2013. Proceedings : 28-31 May 2013, Las Vegas, NV, USA
New York, NY: IEEE, 2013
ISBN: 978-1-4799-0233-0 (Print)
ISBN: 978-1-4799-0232-3
Electronic Components and Technology Conference (ECTC) <63, 2013, Las Vegas/Nev.>
Conference Paper
Fraunhofer IZM ()

Due to various advantages, as high efficiency, compactness and color variability, high brightness LEDs become more and more important for several lighting applications. In this paper, we discuss a completely new packaging approach of ultra thin high brightness LEDs which is applicable on wafer level. Due to the wire bond free manufacturing process as well as the lack of silicone encapsulants and adhesives it promises better reliability. The process flow is described in detail. The feasibility is fully demonstrated and confirmed by cross sections. First electro-optical characterization results are presented.