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Guest editorial special issue on GaN electronic devices

: Ghione, G.; Chen, K.J.; Egawa, T.; Meneghesso, G.; Palacios, T.; Quay, R.


IEEE transactions on electron devices 60 (2013), No.10, pp.2975-2981
ISSN: 0018-9383
Journal Article
Fraunhofer IAF ()

Due to the rapid advances taking place in the development and application of GaN electronics, there is an immediate need to take cognizance of the recent technological improvements and bring the potential and opportunities that exist in the area to a wider device community. The primary goal of this special issue is, therefore, to put together works in different aspects, including modeling, design, technology, characterization and applications so that this special issue will not only be of great archival value but also attract new researchers into this area for Digital Object Identifier 10.1109/TED.2013.2278653 further accelerating the application of III-N devices in building reliable, cheaper, and high-performance electronic systems. The papers collected in this special issue have been grouped into six topics. They are: 1) Fabrication and characterization of GaN-based devices. 2) High power GaN HEMTs for power switching applications. 3) High speed GaN HEMTs for RF applications. 4) Reliability and parasitic issues in GaN HEMTs. 5) Simulation-based development of GaN HEMTs devices. 6) GaN-based low noise amplifiers and gate drive circuits.