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Very high brightness diode laser

 
: Heinemann, S.; Lewis, B.; Michaelis, K.; Schmidt, T.

:

Zediker, M.S. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
High-power diode laser technology and applications X : 22 - 24 January 2012, San Francisco, California, United States; part of SPIE Photonics West
Bellingham, WA: SPIE, 2012 (Proceedings of SPIE 8241)
ISBN: 978-0-8194-8884-8
Art. 82410L
Photonics West Conference <2012, San Francisco/Calif.>
High-Power Diode Laser Technology and Applications Conference <10, 2012, San Francisco/Calif.>
English
Conference Paper
Fraunhofer CLT ()

Abstract
Multiple Single Emitter (MSE) modules allow highest power and highest brightness diode lasers based on standard broad area diodes. 12 single emitters, each rated at 11 W, are stacked in fast axis and with polarization multiplexing 200W are achieved in a fully collimated beam with a beam quality of 7mm*mrad in both axes. Volume Bragg Gratings (VBG) stabilize the wavelength and narrow the linewidth to less than 2nm. Dichroic mirrors are used for dense wavelength multiplexing of 4 channels within 12 nm. 400W are measured from a 0.2 mm fiber, 0.1 NA. Control and drive electronics are integrated into the 200 W platform and represent a basic building block for a variety of applications, such as a flexible turn key system comprising 12 MSE modules. An integrated beam switch directs the light in six 100 m, or in one 0.2 mm and one 0.1 mm fiber. 800W are measured from the six 0.1 mm fibers and 700W from the 0.2 mm fiber. The technologies can be transferred to other wavelengths t o include 793 nm and 1530 nm. Narrow line gratings and optimized spectral combining enable further improvements in spectral brightness and power.

: http://publica.fraunhofer.de/documents/N-264092.html