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High-temperature modeling of AlGaN/GaN HEMTs

 
: Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.

:

Institute of Electrical and Electronics Engineers -IEEE-:
International Semiconductor Device Research Symposium, ISDRS 2009 : College Park, Maryland, USA, 9 - 11 December 2009
Piscataway/NJ: IEEE, 2009
ISBN: 978-1-4244-6030-4
ISBN: 978-1-4244-6031-1
Art. 5378300
International Semiconductor Device Research Symposium (ISDRS) <2009, College Park/Md.>
English
Conference Paper
Fraunhofer IAF ()

: http://publica.fraunhofer.de/documents/N-263474.html