Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

A 1-Kbit EEPROM in SIMOX technology for high-temperature applications up to 250 deg C

: Gogl, D.; Fiedler, H.-L.; Spitz, M.; Parmentier, B.


IEEE journal of solid-state circuits 35 (2000), No.10, pp.1387-1395 : Lit.
ISSN: 0018-9200
Journal Article
Fraunhofer IMS ()
high temperature; high voltage; EEPROM; Festwertspeicher; Hochtemperatur; Hochspannung; SIMOX-Technologie; SOI-Technologie

A 1-Kbit high-temperature EEPROM memory module has been developed in a 1.6µm thin-film SIMOX technology. The memory array is based on single-poly EEPROM cells, which are erased and programmed by Fowler-Nordheim tunneling. Operation at elevated temperatures is achieved by a special array design, suitable for elimination of cell-disturb problems caused by temperature-induced leakage currents of the select transistors. High-voltage switching is done without PMOS transistors in order to avoid leakage currents due to the backgate effect. The memory module is designed for 5-V-only operation and offers an access time of 260 ns at an operating temperature of 250 °C. At 250 °C, data retention of 3000 h and an endurance of 10000 erase/program cycles has been achieved. The area of the 1-Kbit memory module is 0.89 x 2.71 mm².