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Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications

: Schmid, U.; Sledzik, H.; Schuh, P.; Schroth, J.; Oppermann, M.; Brueckner, P.; Raay, F. van; Quay, R.; Seelmann-Eggebert, M.


IEEE transactions on microwave theory and techniques 61 (2013), No.8, Pt.2, pp.3043-3051
ISSN: 0018-9480
Journal Article
Fraunhofer IAF ()
gallium nitride; high power amplifiers; microwave integrated circuits; transmit modules; ultra-wideband technology

This paper presents measurement results of a monolithic microwave integrated circuit (MMIC) chip set and of an ultra-wideband high power amplifier (HPA) transmit module for multi-functional next-generation active electronically scanned antenna radar/electronic warfare/communication applications targeting the frequency range from 6 to 18 GHz. The reported chip set consists of a driver amplifier (DA) MMIC and an HPA MMIC on a high-power gallium-nitride process with high electronic-mobility transistors. The DA reaches a power gain of 11 dB and maximum output power of 2 W, which is sufficient to drive a final stage in a balanced configuration. The HPA reaches a typical output power of 12.5 and 10.6 W in pulsed and continuous wave (CW) operation, respectively. Measurements on the module level indicate 18.5-W typical output power in both pulsed and CW operation.