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Room-temperature external cavity GaSb-based diode laser around 2.13 µm

GaSb-basierende 2.13 µm Diodenlaser im externen Resonator
: Jacobs, U.H.; Scholle, K.; Heumann, E.; Huber, G.; Rattunde, M.; Wagner, J.


Applied Physics Letters 85 (2004), No.24, pp.5825-5826
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IAF ()
diode laser; Diodenlaser; infrared laser; Infrarot-Laser; GaSb; external cavity; externer Resonator; Littrow

We report on a grating-tuned room-temperature (AlGaIn)(AsSb) diode laser oscillating on a single external cavity mode in the wavelength region around 2.13 µm. A total tuning range of 43 nm with an optical output power of up to 14.7 mW was achieved with a linewidth less than 3.85 MHz.