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Room-temperature intersubband emission from GaInAs-AlAsSb quantum cascade structure

Raumtemperatur Intersubband-Emission von GaInAs-AlAsSb Quantenkaskadenstruktur
 
: Yang, Q.K.; Manz, C.; Bronner, W.; Köhler, K.; Wagner, J.

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Electronics Letters 40 (2004), No.21, pp.1339-1340
ISSN: 0013-5194
English
Journal Article
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; superlattice; Übergitter; optical property; optische Eigenschaften

Abstract
Room-temperature (300 K) intersubband electroluminescence has been obtained from a quantum cascade structure adopting triple-well vertical-transition active regions, based on Ga(0.47)In(0.53)As/AlAs(0.56)Sb(0.44) heterostructures grown lattice-matched on InP substrate by molecular beam epitaxy. The emission peak wavelength varies from 4.3 mu at 77 K to 4.5 mu at 300 K.

: http://publica.fraunhofer.de/documents/N-25703.html