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Heteroepitaxial Ge-on-Si by DC magnetron sputtering

 
: Steglich, Martin; Patzig, Christian; Berthold, Lutz; Schrempel, Frank; Füchsel, Kevin; Höche, Thomas; Kley, Ernst-Bernhard; Tünnermann, Andreas

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AIP Advances 3 (2013), No.7, Art. 072108, 8 pp.
ISSN: 2158-3226
English
Journal Article
Fraunhofer IOF ()
Fraunhofer IWM ( Fraunhofer IWM-H) ()
ellipsometry; epitaxial growth; Ge-Si alloy; nanostructured material; sputter deposition; transmission electron microscopy

Abstract
The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

: http://publica.fraunhofer.de/documents/N-256424.html