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AlGaN/GaN-based variable gain amplifiers for W-band operation

: Diebold, S.; Müller, D.; Schwantuschke, D.; Wagner, S.; Quay, R.; Zwick, T.; Kallfass, I.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium, IMS 2013 : 2-7 June 2013, Seattle
New York, NY: IEEE, 2013
ISBN: 978-1-4673-6174-3 (USB)
ISBN: 978-1-4673-2141-9 (online)
ISBN: 978-1-4673-6177-4 (Print)
ISBN: 978-1-4673-6175-0 (print)
4 pp.
International Microwave Symposium (IMS) <2013, Seattle/Wash.>
Conference Paper
Fraunhofer IAF ()
gain control; gallium nitride; GaN; HEMTs; MMICs; phase control; phase shifters; power amplifiers; variable gain amplifier; VGA

In this paper three versions of a variable gain amplifier (VGA) monolithic millimetre-wave integrated circuit (MMIC) are presented. They make use of 100 nm gate-length AlGaN/GaN-based high electron mobility transistors (HEMTs) grown on SiC. The MMICs operate in the 75 to 110 GHz band and have a centre-frequency of 94 GHz. Different phase compensation techniques, which are proposed in literature are applied and their suitability for millimetre-wave (mmW) frequency application is evaluated. We propose an additional phase compensation means leading to our best VGA version providing a gain tuning range from -17.2 to 7 dB with a phase variation of only 12.6 °.