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Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology

: Dennler, P.; Quay, R.; Ambacher, O.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium, IMS 2013 : 2-7 June 2013, Seattle
New York, NY: IEEE, 2013
ISBN: 978-1-4673-6174-3 (USB)
ISBN: 978-1-4673-2141-9 (online)
ISBN: 978-1-4673-6177-4 (Print)
ISBN: 978-1-4673-6175-0 (print)
4 pp.
International Microwave Symposium (IMS) <2013, Seattle/Wash.>
Conference Paper
Fraunhofer IAF ()
AlGaN/GaN; HEMTs; MMICs; broadband amplifiers; reactively-matched amplifiers; distributed amplifiers; NDPA; TWA; active power splitters; K(u)-band

This paper reports on a novel broadband amplifier architecture suitable for wide bandwidth applications such as electronic warfare systems. The proposed topology comprises a distributed active power splitter to function as a driver stage for a reactively-matched power amplifier. As a result, a purely resistive interstage impedance is obtained and therefore the proposed architecture allows wider bandwidth operation as compared to the conventional reactively-matched multistage topology. Due to the traveling wave amplifier character of the driver stage, the presented novel amplifier topology is named semi-reactively-matched amplifier. A 6 GHz to 20GHz dualstage high power amplifier MMIC is designed and realized in order to demonstrate the capabilities of the new concept. The MMIC is based on a 0.25 µm gate length AlGaN/GaN HEMT microstrip transmission line technology. It shows a measured small-signal gain of (18 \'06 4) dB over the entire frequency range. The saturated output power is higher than 4.5W at 20GHz in continuous wave operation.