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A package-integrated 50W high-efficiency RF CMOS-GaN class-E power amplifier

: Heijden, M.P. van der; Acar, M.; Maroldt, S.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Microwave Theory and Techniques Society:
IEEE MTT-S International Microwave Symposium, IMS 2013 : 2-7 June 2013, Seattle
New York, NY: IEEE, 2013
ISBN: 978-1-4673-6174-3 (USB)
ISBN: 978-1-4673-2141-9 (online)
ISBN: 978-1-4673-6177-4 (Print)
ISBN: 978-1-4673-6175-0 (print)
3 pp.
International Microwave Symposium (IMS) <2013, Seattle/Wash.>
Conference Paper
Fraunhofer IAF ()
base station; CMOS; class-E; digital transmitter; drain efficiency; GaN; switch mode power amplifier

A 50 W CMOS-GaN class-E power amplifier in a package is presented. The class-E operated GaN HEMT power bar switches are driven by a high speed, high voltage CMOS power bar driver chip, implemented in a standard 65 nm process technology. The proposed switch-mode power amplifier demonstrates 76% line-up efficiency and 85% GaN drain efficiency at 2.14 GHz, including the losses of the matching network in the package. To the authors knowledge this is the world's first package-integrated CMOS-GaN power amplifier that could enable digital transmitter architectures based on true switch-mode power amplifier blocks.