Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures

 
: Banzhaf, C.T.; Grieb, M.; Trautmann, A.; Bauer, A.J.; Frey, L.

:

Lebedev, A.A.:
Silicon Carbide and Related Materials 2012 : Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2 - 6, 2012, St. Petersburg, Russian Federation
Dürnten: Trans Tech Publications, 2013 (Materials Science Forum 740/742)
ISBN: 978-3-03-785624-6
pp.691-694
European Conference on Silicon Carbide and Related Materials (ECSCRM) <9, 2012, St. Petersburg>
English
Conference Paper
Fraunhofer IISB ()

Abstract
This study focuses on the characterization of silicon dioxide (SiO2) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities (DIT) of 1*1011 cm-2 eV-1 under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field strengths up to 10 MV/cm.

: http://publica.fraunhofer.de/documents/N-255038.html