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Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth

 
: Neubauer, G.; Salamon, M.; Roider, F.; Uhlmann, N.; Wellmann, P.J.

:

Lebedev, A.A.:
Silicon Carbide and Related Materials 2012 : Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2 - 6, 2012, St. Petersburg, Russian Federation
Dürnten: Trans Tech Publications, 2013 (Materials Science Forum 740/742)
ISBN: 978-3-03-785624-6
pp.27-30
European Conference on Silicon Carbide and Related Materials (ECSCRM) <9, 2012, St. Petersburg>
English
Conference Paper
Fraunhofer IIS ()
Fraunhofer IZFP ()

Abstract
In this paper, we present for the first time an in-situ 3-D reconstruction of the SiC crystal growth interface using X-ray computed tomography (CT). We show that the shape of the growth interface can be determined with high precision at growth temperatures above 2100 °C in a conventional 3 PVT (physical vapor transport) growth system.

: http://publica.fraunhofer.de/documents/N-255035.html