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Surface charge and interface state density on silicon substrates after Ozone based wet-chemical oxidation and hydrogen-termination

: Angermann, H.; Wolke, K.; Gottschalk, C.; Moldovan, A.; Roczen, M.; Fittkau, J.; Zimmer, M.; Rentsch, J.


Mertens, P. ; Interuniversity Micro-Electronics Center -IMEC-, Louvain:
Ultra clean processing of semiconductor surfaces XI : Selected, peer reviewed papers from the 11th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 17 - 19, 2012, Gent, Belgium
Durnten-Zurich: TTP, 2013 (Solid state phenomena 195)
ISBN: 978-3-03-785527-0
International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) <11, 2012, Gent>
Conference Paper
Fraunhofer ISE ()

Wet-chemical oxidation in DIWO3 at ambient temperature could be a high quality and low cost alternative to current cleanings with liquid chemicals and also for the preparation of Hterminated Si substrate surfaces. Sequences of DIW-O3 oxidation and subsequent oxide removal in HF containing solutions can be also utilized to prepare hydrophobic substrates, which are predominantly required as the starting point for subsequent layer deposition and contact formation. On H-terminated substrated prepared this way H-terminated substrates low values of Dit(E) could be achieved, comparable to values obtained on similar substrates by the RCA process followed by HF dip. On the oxidized hydrophilic surface a homogenous oxide layer can be applied to improve the wettability for subsequent processes on textured solar substrates. The feasibility of wet-chemical substrate oxidation in DIW-O3 prior to inline doping and diffusion of crystalline solar cells for improved emitter formation has been recently demonstrated [7]. The uniformity of the emitter was significantly improved on both mono- and multi-crystalline Si solar cell substrates using standard texturing and diffusion processes.