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Investigation of the sulfur doping profile in femtosecond-laser processed silicon

: Guenther, K.-M.; Gimpel, T.; Kontermann, S.; Schade, W.


Applied Physics Letters 102 (2013), No.20, Art. 202104, 4 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
Journal Article
Fraunhofer HHI ()

In this letter, we demonstrate that silicon can be doped with electrically active sulfur donors beyond the solubility limit of 3 × 10(exp 16) cm-3. We investigate the sulfur doping profile at the surface of femtosecond-laser processed silicon with secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements. SIMS confirms previous observations that the fs-laser process can lead to a sulfur hyperdoping of 5 × 10(exp 19) cm-3 at the surface. Nevertheless, the electrical measurements show that less than 1% of the sulfur is electrically active as a donor.