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Study of hydrogenated AlN as an anti-reflective coating and for the effective surface passivation of silicon

: Krugel, G.; Sharma, A.; Wolke, W.; Rentsch, J.; Preu, R.


Physica status solidi. Rapid research letters 7 (2013), No.7, pp.457-460
ISSN: 1862-6254
ISSN: 1862-6270
Journal Article
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Oberflächen - Konditionierung; Passivierung; Lichteinfang; Pilotherstellung von industrienahen Solarzellen; Produktionsanlagen und Prozessentwicklung; passivation; sputtering; nitride

Stacks of aluminum oxide and silicon nitride are frequently used in silicon photovoltaics. In this Letter, we demonstrate that hydrogenated aluminum nitride can be an alternative to this dual-layer stack. Deposited on 1 ohm cm p-type FZ silicon, very low effective surface recombination velocities of 8 cm/s could be reached after firing at 820 °C. This excellent passivation is traced back to a high density of fixed charges at the interface of approximately -1 × 1012 cm-2 and a very low interface defect density below 5 × 1010 eV-1 cm-2. Furthermore, spectral ellipsometry measurements reveal that these aluminum nitride layers have ideal optical properties for use as anti-reflective coatings.