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Silicon backside machining using a nanosecond 2-µm Tm:fiber laser

: Shah, L.; Bonhoff, T.; Ferhat, T.; El-Sherif, A.F.; Ramme, M.; Willis, C.C.C.; Baudelet, M.; Kadwani, P.; Gaida, C.; Gebhardt, M.; Mingareev, I.; Richardson, M.

Preprint urn:nbn:de:0011-n-2548329 (6.8 MByte PDF)
MD5 Fingerprint: b01a783e0be3823bfe8b9fde29d6a558
Created on: 6.9.2014

Maher, M.A. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Micromachining and microfabrication process technology XVIII : 5 and 7 February 2013, San Francisco, California, United States
Bellingham, WA: SPIE, 2013 (Proceedings of SPIE 8612)
ISBN: 978-0-8194-9381-1
Paper 861207
Conference "Micromachining and Microfabrication Process Technology" <18, 2013, San Francisco/Calif.>
Conference Paper, Electronic Publication
Fraunhofer ILT ()

Utilizing the transparency of silicon at 2 µm, we are able to ablate the backside of 500-m thick silicon wafers without causing any damage to the front surface using a novel nanosecond Tm:fiber laser system. We report on our high energy/high peak power nanosecond Tm:fiber laser and provide an initial description of the effects of laser parameters such as pulse duration and energy density on the ablation, and compare thresholds for front and backside machining. The ability to selectively machine the backside of silicon wafers without disturbing the front surface may lead to new processing techniques for advanced manufacturing in solar cell and microelectronics industries.