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High-power, high-brightness GaInSb/AlGaAsSb quantum-well diode-lasers emitting at 1.9µm

Hochleistungs-Quantentopf-Diodenlaser hoher Brillanz auf Basis von GaInSb/AlGaAsSb mit einer Emissionswellenlänge von 1.9 µm
 
: Pfahler, C.; Manz, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Wagner, J.

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IEEE Lasers and Electro-Optics Society:
LEOS 2004, The 17th Annual Meeting of the IEEE Laser and Electro-Optics Society. Vol.2
Piscataway, NJ: IEEE, 2004
ISBN: 0-7803-8557-8
pp.479-480
IEEE Lasers and Electro-Optics Society (Annual Meeting) <17, 2004, Rio Grande/Puerto Rico>
English
Conference Paper
Fraunhofer IAF ()
high brightness; hohe Brillanz; high power; high-power diode laser; Hochleistungs-Diodenlaser; tapered laser; Trapezlaser; laser diode; Diodenlaser; AlGaAsSb; GaInSb; InGaSb; semiconductor; Halbleiter

Abstract
In the last few years there has been an increasing demand for high-power diode lasers emitting in the infrared wavelength region around 2 mu. The (AIGaIn)(AsSb) material system is the most promissing candidate to cover this spectral range. High output powers exceeding 1 W in cw mode at room temperature based an broad-area (BA) lasers have been reported by different groups. In many applications such as material processing, laser surgery or pumping of solid-state lasers it is desirable to have light-sources which show simultaneously both high output powers and a good beam quality. Because of their poor beam quality BA lasers do not fulfill the latter requirement whereas tapered diode lasers do so.

: http://publica.fraunhofer.de/documents/N-25472.html