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High-power high-brightness tapered diode lasers and amplifiers for eye-safe operation

Trapezlaser und -verstärker mit hoher Leistung und Strahlqualität bei augensicheren Wellenlängen
: Kallenbach, S.; Kelemen, M.T.; Aidam, R.; Lösch, R.; Kaufel, G.; Mikulla, M.; Weimann, G.


IEEE Lasers and Electro-Optics Society:
LEOS 2004, The 17th Annual Meeting of the IEEE Laser and Electro-Optics Society. Vol.2
Piscataway, NJ: IEEE, 2004
ISBN: 0-7803-8557-8
IEEE Lasers and Electro-Optics Society (Annual Meeting) <17, 2004, Rio Grande/Puerto Rico>
Conference Paper
Fraunhofer IAF ()
high power; Hochleistungslaser; high brightness; hohe Brillanz; tapered laser; Trapezlaser; tapered amplifiers; Trapezverstärker; external cavity; externer Resonator; InGaAsP/InP; 14xx nm; Raman; pump laser; Pumplaser

Spatially single-mode high-power diode lasers and amplifiers are well-established as GaAs based devices at wavelengths around 1 mu. However, there are many applications such as pumping of Raman and rare-earth doped fiber amplifiers, welding of plastics, contact-free soldering, or Lidar/Ladar, for which InP based devices emitting around 1.5 mu would be favorable: Different from GaAs diode lasers, they operate in an eye-safe wavelength region, and low-price standard optical components established for telecommunication can be employed. Additionally, widely tunable high-brightness amplifiers can be employed as versatile S-band semiconductor amplifiers for all-optical networks as well as in spectroscopic applications. We demonstrate both high-power high-brightness InGaAsP/InP lasers and tunable amplifiers based an the ridge waveguide tapered resonator design.