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A 220 GHz metamorphic HEMT amplifier MMIC

Ein auf metamorpher HEMT Technologie basierendes 220 GHz Verstärker MMIC
 
: Tessmann, A.; Leuther, A.; Massler, H.; Kuri, M.; Schwörer, C.; Schlechtweg, M.; Weimann, G.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE CSICS Compound Semiconductor Integrated Circuit Symposium 2004
Piscataway, NJ: IEEE, 2004
ISBN: 0-7803-8616-7
pp.297-300
Compound Semiconductor IC Symposium (CSICS) <26, 2004, Monterey/Calif.>
English
Conference Paper
Fraunhofer IAF ()
G-Band; metamorphic high electron mobility transistor; metamorpher Transistor mit hoher Elektronenbeweglichkeit; MHEMT; MMIC; cascode; Kaskade; millimeter wave; Millimeterwelle; amplifier; Verstärker; coplanar waveguide; koplanare Wellenleiter

Abstract
In this paper, we present the development of two 220 GHz low-noise amplifier (LNA) MMIC's for use in high-resolution active and passive millimeter-wave imaging systems. The amplifier circuits have been realized using a 0.1mu InAlAs/InGaAs based depletion-type metamorphic high electron mobility transistor (MHEMT) technology in combination with coplanar circuit topology and cascode transistors, thus leading to a compact chip-size and excellent gain performance. The realized single-stage cascode LNA exhibited a small-signal gain of 5 dB at 220 GHz and a maximum gain of 7 dB at 215 GHz with an over-all chip-size of 1 x 1 mm2. The four-stage amplifier circuit achieved a linear gain of 20 dB at the frequency of operation and more than 10 dB over the bandwidth from 180 to 225 GHz while covering a chip-area of 1 x 2.5 mm2.

: http://publica.fraunhofer.de/documents/N-25452.html