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Measuring residual stress on the nanometer scale - Novel tools for fundamental and applied research

: Wehrspohn, R.B.; Krause, M.; Schriever, C.


Anderson, P.:
Properties and processes at the nanoscale - nanomechanics of materials behavior : Symposium held November 28 - December 2, 2011, Boston, Massachussetts
New York: Cambridge Univ. Press, 2012 (Materials Research Society Symposium Proceedings 1424)
ISBN: 978-1-605-11401-9
Symposium SS "Properties and Processes at the Nanoscale - Nanomechanics of Materials Behavior" <2012, Boston/Mass.>
Materials Research Society (Fall Meeting) <2012, Boston/Mass.>
Conference Paper
Fraunhofer IWM ()

In the present paper, strain measurements based on second harmonic generation (SHG) and electron backscatter diffraction (EBSD) is demonstrated via two illustrative applications. While SHG gains access to strains in buried interfaces, EBSD can be used to measure strains in crystalline thin films with high spatial resolution on the order of tens of nanometers and high surface sensitivity. In addition, target preparation using low-voltage ion beam milling is demonstrated, gaining access to unstrained sample positions in strained silicon on insulator (sSOI) systems which are necessary for common "pattern-shift" methodologies.