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Field emission mechanism of H-terminated N-type diamond NEA surface

: Yamada, T.; Hasegawa, M.; Yamaguchi, H.; Kudo, Y.; Okano, K.; Nebel, C.E.


Bergonzo, P.:
Diamond electronics and biotechnology - fundamentals to applications V : Symposium held November 28 - December 2, 2011, Boston, Massachussetts
Cambridge: Cambridge University Press, 2012 (Materials Research Society Symposium Proceedings 1395)
ISSN: 0272-9172
ISBN: 978-1-60511-372-2
Symposium N "Diamond Electronics and Biotechnology - Fundamentals to Applications V" <2012, Boston/Mass.>
Materials Research Society (Fall Meeting) <2012, Boston/Mass.>
Conference Paper
Fraunhofer IAF ()

Field electron emission model of hydrogen-terminated n-type diamond was discussed. Ultraviolet photoelectron spectroscopy characterizations indicated that the electron affinity was -0.7 eV and an internal barrier of about 3.5 eV existed on the surface. Field electron emission properties depended on anode-diamond distances. Schottky barrier lowering model suggested that this internal barrier was lowered by the electric field (5.4×10 6 V/cm) applied onto the negative electron affinity surface of the H-terminated n-type diamond.