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Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads

: Kaynak, M.; Wietstruck, M.; Zhang, W.; Drews, J.; Barth, R.; Knoll, D.; Korndorfer, F.; Scholz, R.; Schulz, K.; Wipf, C.; Tillack, B.; Kaletta, K.; Suchodoletz, M.V.; Zoschke, K.; Wilke, M.; Ehrmann, O.; Ulusoy, A.C.; Purtova, T.; Liu, G.; Schumacher, H.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S International Microwave Symposium, IMS 2012 : 17-22 June 2012, Montreal, QC, Canada
New York, NY: IEEE, 2012
ISBN: 978-1-4673-1088-8
ISBN: 978-1-4673-1085-7 (Print)
ISBN: 978-1-4673-1086-4 (Online)
ISBN: 978-1-4673-1087-1
Art. 6259417
International Microwave Symposium (IMS) <2012, Montréal>
Conference Paper
Fraunhofer IZM ()

This paper presents packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads for frequency tuning at mm-wave frequencies. The developed technique provides easy optimization to maximize the RF performance at the desired frequency without having an effect on the switch mechanics. Insertion loss less than 0.25 dB and isolation better than 20 dB are achieved from 30 to 100 GHz. A glass cap with a silicon frame is used to package the switch. Single-pole-double-throw (SPDT) switches and a 24-77 GHz reconfigurable LNA is also demonstrated as a first time implementation of single chip BiCMOS reconfigurable circuit at such high frequencies.