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Nano-XRF and micro-raman studies of metal impurity decoration around dislocations in multicrystalline silicon

: Bertoni, M.I.; Sarau, G.; Fenning, D.P.; Rinio, M.; Rose, V.; Maser, J.; Buonassisi, T.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
38th IEEE Photovoltaic Specialists Conference, PVSC 2012. Vol.3 : Austin, Texas, USA, 3 - 8 June 2012
Piscataway, NJ: IEEE, 2012
ISBN: 978-1-4673-0064-3
ISBN: 978-1-4673-0066-7
Photovoltaic Specialists Conference (PVSC) <38, 2012, Austin/Tex.>
Conference Paper
Fraunhofer ISE ()

We push the resolution limits of synchrotron-based nano-X-ray fluorescence mapping below 100 nm to investigate the fundamental differences between benign and deleterious dislocations in multicystalline silicon solar cells. We observe that after processing recombination-active dislocations contain a high degree of nanoscale iron and copper decoration, while recombination-inactive dislocations appear clean. To study the origins of the distinct metal decorations around different dislocations we analyze as-grown samples as well as specimens at different stages of processing. We complement our X-ray studies with micro-Raman mapping to understand the relationship between metallic decoration and stress fields around dislocations.