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Analysis of pore sealing processes and TiN diffusion barrier deposition on a porous ultra low-k dielectric by ellipsometric porosimetry and PALS

: Ahner, N.; Ecke, R.; Schulz, S.E.; Jungmann, M.; Krause-Rehberg, R.; Butterling, M.; Anwand, W.; Wagner, A.; Preusse, A.

Semiconductor Manufacturing Technology Consortium:
Advanced Metallization Conference 2012 : Albany, New York, USA, 9 - 11 October 2012
Red Hook, NY: Curran, 2012
ISBN: 978-1-622-76999-5
10 pp.
Advanced Metallization Conference <2012, Albany/NY>
Conference Paper
Fraunhofer ENAS ()

Porosimetry using PALS and DBS are promising supplements to ellipsometric porosimetry for analysis of thin low-k dielectric films Depth depending determination of pore sizes and pore size distributions Depth depending analysis of process effects on the chemical structure of the material Main advantages: Sealed layers can be analyzed, which is not possible using EP Information on both closed and open porosity are obtained MePS setup at HZDR allows fast spectra recording at improved conditions.