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Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

 
: Maier, R.; Häublein, V.; Ryssel, H.; Völlm, H.; Feili, D.; Seidel, H.; Frey, L.

:

Pelaz, L. ; American Institute of Physics -AIP-, New York:
Ion Implantation Technology 2012. 19th International Conference on Ion Implantation Technology. Proceedings : 25-29 June 2012, Valladolid, Spain
Woodbury, N.Y.: AIP, 2012 (AIP Conference Proceedings 1496)
ISBN: 978-0-7354-1108-1 (Set)
ISBN: 978-0-7354-1109-8 (Book)
ISSN: 0094-243X
pp.276-279
International Conference on Ion Implantation Technology (IIT) <19, 2012, Valladolid>
English
Conference Paper
Fraunhofer IISB ()

Abstract
The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate.

: http://publica.fraunhofer.de/documents/N-254234.html