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Pulsed THz emission from low temperature grown Be-doped InGaAs/InAlAs photoconductive switches at 1030 nm excitation

: Dietz, R.J.B.; Wilk, R.; Globisch, B.; Roehle, H.; Stanze, D.; Ullrich, S.; Schumann, S.; Born, N.; Voss, N.; Stecher, M.; Koch, M.; Sartorius, B.; Schell, M.


Institute of Electrical and Electronics Engineers -IEEE-:
37th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2012 : University of Wollongong, Australia, September 23 - 28, 2012
Piscataway/NJ: IEEE, 2012
ISBN: 978-1-4673-1598-2 (Print)
ISBN: 978-1-4673-1596-8 (Online)
ISBN: 978-1-4673-1597-5
Art. 6380349
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) <37, 2012, Wollongong/Australia>
Conference Paper
Fraunhofer HHI ()

We present first results of pulsed THz emission from low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures at an excitation wavelength of 1030 nm. The spectra obtained reach 3 THz. We further investigate the material's relaxation time constants by differential transmission experiments.