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A 4 x 64 pixel CMOS image sensor for 3-D measurement applications

: Elkhalili, O.; Schrey, O.M.; Mengel, P.; Petermann, M.; Brockherde, W.; Hosticka, B.J.


IEEE journal of solid-state circuits 39 (2004), No.7, pp.1208-1212
ISSN: 0018-9200
Journal Article
Fraunhofer IMS ()
image sensor; MDSI; pixel array; Bildsensor; CMOS-Sensor; 3D-Darstellung; Bildverarbeitung

A 4 x 64 pixel 3-D CMOS imager based on time-of-flight (TOF) has been developed and successfully tested. The measurement range is up to 8 m with resolution of 1 cm. The scene depth is determined by measurement of the travel time of reflected laser pulses by employing a fast on-chip synchronous shutter (maximum shutter speed 30 ns). The Multiple Double Short Time Integration (MDSI) algorithm enables suppression of the background illumination and correction for reflectance variations in the scene objects. The pixel size is 130 x 300 µm2. The sensor chip has been realized in a 0.5-µm n-well standard CMOS process.