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Robust GaN HEMT low-noise amplifier MMICs for X-band applications

Robuste, rauscharme Gallimnitrid-Verstärker für Anwendungen im X-Band
 
: Krausse, D.; Quay, R.; Kiefer, R.; Tessmann, A.; Massler, H.; Leuther, A.; Merkle, T.; Müller, S.; Schwörer, C.; Mikulla, M.; Schlechtweg, M.; Weimann, G.

GAAS 2004. 12th European Gallium Arsenide & other Compound Semiconductors Application Symposium
London: Horizon House, 2004
ISBN: 1-58053-990-4
pp.71-74
European Gallium Arsenide and Other Compound Semiconductors Application Symposium (GAAS) <12, 2004, Amsterdam>
English
Conference Paper
Fraunhofer IAF ()
low noise; rauscharm; amplifier; Verstärker

Abstract
This work presents MMIC low-noise amplifiers based an AlGaN/GaN HEMT technology on SiC substrate for robust receiver applications at X-band between 8 GHz and 11 GHz. Three versions of one-stage and two versions of two-stage amplifiers are presented with a noise figure of 1.81 dB at 10 GHz and 18 dB of small-signal gain for the two-stage device fully integrated in coplanar passive technology. The paper describes modeling and circuit design, bias dependence of the small-signal and noise circuit parameters of the, MMICs realized, and high-power and intermodulation behavior.

: http://publica.fraunhofer.de/documents/N-25326.html