Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

GaN doped with beryllium - An effective light converter for white light emitting diodes

 
: Teisseyre, H.; Bockowski, M.; Grzegory, I.; Kozanecki, A.; Damilano, B.; Zhydachevskii, Y.; Kunzer, M.; Holc, K.; Schwarz, U.T.

:

Applied Physics Letters 103 (2013), No.1, Art.011107, 5 pp.
ISSN: 0003-6951 (Print)
ISSN: 1077-3118
ISSN: 1931-9401 (online)
English
Journal Article
Fraunhofer IAF ()

Abstract
So far, most of the studies on GaN doped with beryllium have mainly concentrated on possible ptype doping. Unfortunately, realization of p-type conductivity in such a way appeared to be very difficult. It seems, however, that bulk crystals doped with beryllium can be used as white light converters in the monolithic white light emitting diodes. To realize monolithic white light emitting diode, we used blue light emitting diodes and a single GaN:Be crystal as converter. High value of the Color Rendering Index gives hope for obtaining an effective light converter based on gallium
nitride doped with beryllium.

: http://publica.fraunhofer.de/documents/N-249755.html