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A 67 GHz GaN voltage-controlled oscillator MMIC with high output power

 
: Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.

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IEEE microwave and wireless components letters 23 (2013), No. 7, pp.374-376
ISSN: 1051-8207
ISSN: 1531-1309
English
Journal Article
Fraunhofer IAF ()
gallium nitride (GaN); high electron mobility transistor (HEMT); monolithically microwave integrated circuit (MMIC); V-band (50-75 GHz); voltage controlled oscillator (VCO)

Abstract
This letter describes the design and the realization of a fixed-frequency oscillator and voltage-controlled oscillator (VCO)
MMIC realized in an AlGaN/GaN HEMT technology with 100 nm gate length. Both oscillators achieve output power levels of almost 20 dBm without post-amplification. The oscillation frequency of the fixed-frequency oscillator is 65.6 GHz, while the VCO can be tuned from 65.6 to 68.8 GHz, which leads to a relative bandwidth of 5%. The phase noise of the VCO is dBc/Hz at 1 MHz frequency offset.

: http://publica.fraunhofer.de/documents/N-249754.html