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Challenges and opportunities for process modeling in the nanotechnology era

: Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.


Journal of computational electronics 13 (2014), No.1, pp.3-17
ISSN: 1569-8025
Journal Article
Fraunhofer IISB ()
process simulation; International Technology Roadmap for Semiconductors (ITRS); physical model; lithography; deposition; etching; ion implantation; diffusion; activation; oxidation

Process modeling is a very diverse area with respect of the processes and materials to be treated as well as concerning the methods to be used. In this paper an outline of the scope of process modeling and simulation is given. Challenges and opportunities are discussed referring especially to the challenges identified in the Modeling and Simulation chapter of the International Technology Roadmap for Semiconductors. Some related results of Fraunhofer IISB are presented. Overall, TCAD including process modeling and simulation is an indispensable tool for the further development of semiconductor technologies and devices, and offers large opportunities to support and partly enable future scaling in More Moore, but also the further improvement of More than Moore devices and systems.