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(In)AlGaN heterojunction field effect transistors and circuits for high-power applications at microwave and millimeter-wave frequencies

: Maroldt, S.; Quay, R.; Dennler, P.; Schwantuschke, D.; Musser, M.; Dammann, M.; Aidam, R.; Waltereit, P.; Tessmann, A.; Ambacher, O.


Japanese journal of applied physics 52 (2013), No.8, Art. 08JN13, 6 pp.
ISSN: 0021-4922
ISSN: 1347-4065
Journal Article
Fraunhofer IAF ()

The suitability of the AlGaN/GaN heterostructure for applications up to 20 GHz is demonstrated based on a technically mature process. A broadband power amplifier integrated circuit is designed and fabricated in order to monitor the technology performance. Further, a 100W power transistor for mobile communications is realized with an efficiency of 70% and an operation frequency of up to 3 GHz. We also demonstrate the performance of a 60W switch-mode power amplifier module with 75% efficiency for industrial, scientific and medical applications at 2.4 GHz. To push the technology towards higher millimeter-wave frequencies an InAlGaN-based heterostructure was developed. This structure yields high sheet carrier concentration and mobility of 1.9 x 10(13) cm(-2) and 1590 cm(2) V(-1) s(-1), respectively. An excellent fT of 110 GHz and fmax of 190 GHz were achieved with HFETs with a gate length of 100 nm. This allowed the realization of InAlGaN-based power amplifier monolithic microwave integrated circuits (MMICs) operating at millimeter-wave frequencies of 60 and 94 GHz.