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Detection of terahertz/sub-terahertz radiation by asymmetrically-shaped 2DEG layers

Detektion von Terahertz/SubTerahertz Strahlung durch asymetrisch geformte 2DEG-Schichten
: Seliuta, D.; Sirmulis, E.; Tamosiunas, V.; Balakauskas, S.; Asmontas, S.; Suziedelis, A.; Gradauskas, J.; Valusis, G.; Lisauskas, A.; Roskos, H.G.; Köhler, K.


Electronics Letters 40 (2004), No.10, pp.631-632
ISSN: 0013-5194
Journal Article
Fraunhofer IAF ()
III-V semiconductor; III-V Halbleiter; heterostructure; Heterostruktur; terahertz; spectroscopy; Spektroskopie

A diode structure to detect THz/subTHz radiation based on an MBE-grown modulation-doped GaAs/Al(0.25)Ga(0.75)As structure is proposed. Devices have an asymmetrically-shaped geometrical from in the plane of the structure and are fabricated as mesas of 2 µm depth by wet etching. The incident terahertz/sub-terahertz radiation induces a voltage signal over the ends of the sample. Detection by non-uniform carrier heating effects under external illumination is explained and the devices operation from 10 GHz up to 2.52 THz at room temperature is demonstrated.