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GaN-based high voltage transistors for efficient power switching

: Waltereit, P.; Reiner, R.; Czap, H.; Peschel, D.; Müller, S.; Quay, R.; Mikulla, M.; Ambacher, O.


Physica status solidi. C 10 (2013), No.5, pp.831-834
ISSN: 1610-1634
ISSN: 1610-1642
ISSN: 1862-6351
International Symposium on Compound Semiconductors (ISCS) <39, 2012, Santa Barbara/Calif.>
Journal Article, Conference Paper
Fraunhofer IAF ()
GaN; high voltage; switch

We present results from GaN-based high voltage transistors used for power switching applications. The static and dynamic properties of transistors on SiC and Si substrates are determined. Overall, this technology is capable to deliver 1000 V breakdown and 95 A output current as well as a lower product of on-resistance and gate charge than conventional Si-based structures. Areas of further improvement in epitaxial growth and device processing are outlined in order to combine these high currents and high voltages in a single device.