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Low temperature grown be-doped InGaAs/InAlAs photoconductive antennas excited at 1030 nm

: Dietz, R.J.B.; Wilk, R.; Globisch, B.; Roehle, H.; Stanze, D.; Ullrich, S.; Schumann, S.; Born, N.; Koch, M.; Sartorius, B.; Schell, M.


Journal of infrared, millimeter, and terahertz waves 34 (2013), No.3-4, pp.231-237
ISSN: 1866-6892
ISSN: 1866-6906
Journal Article
Fraunhofer HHI ()

We demonstrate pulsed THz emission and detection in low temperature (LT) MBE grown Be-doped InGaAs/InAlAs multi-nanolayer structures for an excitation wavelength of 1030 nm. We obtained spectra with a bandwidth of up to 3 THz. Furthermore, we performed differential transmission experiments to investigate the material's relaxation time constants.