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Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

 
: Yurchuk, E.; Müller, J.; Knebel, S.; Sundqvist, J.; Graham, A.P.; Melde, T.; Schröder, U.; Mikolajick, T.

:

Spiga, S.:
E-MRS 2012 Symposium L: Novel Functional Materials and Nanostructures for innovative non-volatile memory devices : 14-17 May 2012, Strasbourg, France
Amsterdam: Elsevier, 2013 (Thin solid films 533.2013)
ISSN: 0040-6090
pp.88-92
European Materials Research Society (EMRS Spring Meeting) <2012, Strasbourg>
Symposium L "Novel Functional Materials and Nanostructures for innovative non-volatile memory devices" <2012, Strasbourg>
English
Conference Paper, Journal Article
Fraunhofer IPMS ()

Abstract
The ferroelectric behaviour of silicon doped hafnium oxide has been investigated using metal-insulator-metal capacitor structures for film thicknesses of 9 and 27 nm, annealing temperatures between 450 and 1000 degrees C and silicon contents from 0 to 8.5 cat%. For the 9 nm thick films, an improvement of the ferroelectric remanent polarization was revealed for decreasing silicon content and increasing annealing temperature, which corresponds well with the HfO2 structural phases observed by x-ray diffraction. An increase of the film thickness up to 27 nm induced an apparent decrease of the remanent polarization and modified the temperature dependence. This change in the ferroelectric properties was shown to be determined by the different crystallization behaviour of the thick films with respect to the thin films.

: http://publica.fraunhofer.de/documents/N-241823.html