Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Light-induced degradation in copper-contaminated gallium-doped silicon

 
: Lindroos, J.; Yli-Koski, M.; Haarahiltunen, A.; Schubert, M.C.; Savin, H.

:

Physica status solidi. Rapid research letters 7 (2013), No.4, pp.262-264
ISSN: 1862-6254
ISSN: 1862-6270
English
Journal Article
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Charakterisierung; Zellen und Module; Degradation; Silicon; Gallium; Copper

Abstract
To date, gallium-doped Czochralski (Cz) silicon has constituted a solar cell bulk material free of light-induced degradation. However, we measure light-induced degradation in gallium-doped Cz silicon in the presence of copper impurities. The measured degradation depends on the copper concentration and the material resistivity. Gallium-doped Cz silicon is found to be less sensitive to copper impurities than boron-doped Cz silicon, emphasizing the role of boron in the formation of copper-related light-induced degradation.

: http://publica.fraunhofer.de/documents/N-241654.html