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Surface order evaluation of the heteroepitaxial diamond film grown on an inclined ß-SIC(001)

Untersuchung der Oberflächenstruktur von heteroepitaktischem Diamant auf geneigtem ß-SIC(001) Substrat
 
: Kono, S.; Goto, T.; Abukawa, T.; Wild, C.; Koidl, P.; Kawarada, H.

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Japanese Journal of Applied Physics. Part 1, Regular papers, short notes and review papers 39 (2000), No.524, 7B, pp.4372-4373
ISSN: 0021-4922
English
Journal Article
Fraunhofer IAF ()
diamond; CVD diamond; Diamant; CVD-Diamant; heteroepitaxy; Heteroepitaxie; diamond surface; Diamantoberfläche

Abstract
The surface order of a heteroepitaxial diamond (001) film grown on an inclined beta-SiC(001) has been evaluated with a micro-electron beam in ultra-high-vacuum. It was determined that the range of order of surface dimer-rows of the heteroepitaxialdiamond film is about 15 A.U.

: http://publica.fraunhofer.de/documents/N-2405.html